The Analysis of the Stability of 65 nm SRAM at Near Threshold Region

Reducing the supply voltage to the near threshold region is one method to reduce the power consumption. However, operating in this region the performance of 6T-SRAM is very poor, and more sensitive to the process variation. In this paper, we introduce a novel 8T-SRAM, when compared to the standard 6T-SRAM, they have the equal static power consumption, and its read noise margin has doubled. So this 8T-SRAM not only has low power consumption, but also has high stability. Further, the impact of process variation on the read noise margin has been analysed, when compared to 6T-SRAM, 8T-SRAM is not sensitive to process variation.