Study on Reliability of A New Anti-fuse Device Based on ALD Al₂O₃

Metal-Insulator-Metal (MIM) antifuse has always been used in Field Programmable Gate Array (FPGA) interconnection structure unit. A High-performance and High-reliability Metal-Insulator-Metal antifuse was fabricated with high κAl₂O₃ deposited by Atomic Layer Deposition (ALD) as the dielectric. The anti-fuse unit's off-state resistance exceeds 1TΩ, and the on-state resistance is very low, which satisfies the normal distribution, the on-resistance value is concentrated around 22Ω, and the standard deviation is only 3.7Ω, so it has high on/off ratio. In this paper, the Time Dependent DielectricBreakdown (TDDB) of the structure is studied. The results show that the predicted lifetime of the unprogrammed anti-fuse cell is 1591 years at 2V operating voltage. At the same time, when the read current is 0~20mA, the programmed anti-fuse remains stable. This shows that the antifuse has a very high reliability in both low-impedance and high-impedance states.