A Numerical Model of the Distribution of Surface Potential for Short-Channel n-MOSFET with Considering the Quantum Effects

In this paper,a numerical model for the distribution of channel surface potential has been proposed.The influence of the drain to source bias on the distribution of channel surface potential has been studied.Calculation results agree well with 2-D quantum mechanical numerical simulation.The results demonstrate that the voltage drop between drain and source reduces the channel surface potential in linear region and leads to Vth roll-off,whereas the influence will be more serious in saturation region.